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横向不对称性对磁场中应变半导体纳米环电子结构的影响。

Effects of lateral asymmetry on electronic structure of strained semiconductor nanorings in a magnetic field.

作者信息

Milošević M M, Tadić M, Peeters F M

机构信息

Faculty of Electrical Engineering, University of Belgrade, PO Box 3554, 11120 Belgrade, Serbia.

出版信息

Nanotechnology. 2008 Nov 12;19(45):455401. doi: 10.1088/0957-4484/19/45/455401. Epub 2008 Oct 8.

Abstract

The influence of lateral asymmetry on the electronic structure and optical transitions in elliptical strained InAs nanorings is analyzed in the presence of a perpendicular magnetic field. Two-dimensional rings are assumed to have elliptical inner and outer boundaries oriented in mutually orthogonal directions. The influence of the eccentricity of the ring on the energy levels is analyzed. For large eccentricity of the ring, we do not find any Aharonov-Bohm effect, in contrast to circular rings. Rather, the single-particle states of the electrons and the holes are localized as in two laterally coupled quantum dots formed in the lobes of the nanoring. Our work indicates that the control of shape is important for the existence of the Aharonov-Bohm effect in semiconductor nanorings.

摘要

在存在垂直磁场的情况下,分析了横向不对称性对椭圆应变InAs纳米环中电子结构和光学跃迁的影响。假设二维环具有在相互正交方向上定向的椭圆内边界和外边界。分析了环的偏心率对能级的影响。与圆形环相反,对于环的大偏心率,我们没有发现任何阿哈罗诺夫 - 玻姆效应。相反,电子和空穴的单粒子态如在纳米环叶中形成的两个横向耦合量子点那样局域化。我们的工作表明,形状控制对于半导体纳米环中阿哈罗诺夫 - 玻姆效应的存在很重要。

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