Hao H L, Shen W Z
Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, People's Republic of China.
Nanotechnology. 2008 Nov 12;19(45):455704. doi: 10.1088/0957-4484/19/45/455704. Epub 2008 Oct 9.
We present a detailed investigation into the origin of photoluminescence (PL) from silicon quantum dots in hydrogenated amorphous silicon nitride annealed in oxygen ambient. On the basis of structural characterization, temperature-dependent PL, time-resolved PL, and PL excitation spectra, we identify that the luminescence of the oxidized samples originates from the localized exciton radiative recombination via the surface states related to Si-N or Si-O-Si bonds. In combination with the results due to annealing in argon and hydrogen environments, we have further shown that control of the origin of the PL can be realized by modifying the radiative defect density through annealing treatment.
我们对在氧气环境中退火的氢化非晶硅氮化物中硅量子点的光致发光（PL）起源进行了详细研究。基于结构表征、温度依赖的PL、时间分辨PL和PL激发光谱，我们确定氧化样品的发光源自通过与Si-N或Si-O-Si键相关的表面态的局域激子辐射复合。结合在氩气和氢气环境中退火的结果，我们进一步表明，通过退火处理改变辐射缺陷密度可以实现对PL起源的控制。
