Peter Grünberg Institut (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany.
Nano Lett. 2011 Sep 14;11(9):3550-6. doi: 10.1021/nl201102a. Epub 2011 Aug 30.
Magnetotransport measurements at low temperatures have been performed on InAs nanowires grown by In-assisted molecular beam epitaxy. Information on the electron phase coherence is obtained from universal conductance fluctuations measured in a perpendicular magnetic field. By analysis of the universal conductance fluctuations pattern of a series of nanowires of different length, the phase-coherence length could be determined quantitatively. Furthermore, indications of a pronounced flux cancelation effect were found, which is attributed to the topology of the nanowire. Additionally, we present measurements in a parallel configuration between wire and magnetic field. In contrast to previous results on InN and InAs nanowires, we do not find periodic oscillations of the magnetoconductance in this configuration. An explanation of this behavior is suggested in terms of the high density of stacking faults present in our InAs wires.
低温下的磁输运测量已经在通过 In 辅助分子束外延生长的 InAs 纳米线上进行。通过在垂直磁场中测量普适电导涨落，可以获得电子相位相干的信息。通过分析一系列不同长度纳米线的普适电导涨落模式，可以定量确定相位相干长度。此外，还发现了明显的磁通抵消效应的迹象，这归因于纳米线的拓扑结构。此外，我们还在平行于磁场的配置下进行了测量。与之前在 InN 和 InAs 纳米线上的结果相比，我们在这种配置下没有发现磁电导的周期性振荡。根据我们在 InAs 线中存在的高密度位错，提出了对这种行为的解释。
