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利用原子力声学显微镜探测埋藏的参考结构。

Detection of buried reference structures by use of atomic force acoustic microscopy.

机构信息

Fraunhofer Institute for Non-Destructive Testing, Dresden Branch (IZFP-D), Maria-Reiche-Strasse 2, D-01109 Dresden, Germany.

出版信息

Ultramicroscopy. 2011 Jul;111(8):1405-16. doi: 10.1016/j.ultramic.2011.05.009. Epub 2011 May 30.

DOI:10.1016/j.ultramic.2011.05.009
PMID:21864784
Abstract

The miniaturization of micro- and nanoelectronic components requires new methods for the inspection of buried inner structures at the nanoscale. We used the atomic force acoustic microscopy technique (AFAM) to image subsurface defects. This technique combines high lateral resolution with the capability to determine local elastic properties of materials near the surface. As the structures buried near the surface change the effective tip-sample contact stiffness it is possible to detect them. For the verification of the detection capabilities of AFAM we fabricated well-defined buried void structures with different geometries and dimensions. Large, thin, plate like structures of silicon nitride with a local filling were our first test samples. Then, sets of nine small, square, thin plates with thicknesses increasing stepwise from 30 to 270 nm were etched in a thinned silicon wafer. The last two samples contained wedge structures of widths varying between 1.6 and 10 μm. Our results showed that it was possible to detect buried void structures at depths between 180 and 900 nm. We also observed that the depths at which the buried defects can be detected by the use of the AFAM method depend on the defect dimensions and geometry, and on the mismatch in the elastic properties of the sample and the defects. The experimental results obtained for the groups of small, thin plates were verified by quantitative analysis via finite element method (FEM) simulations.

摘要

微型和纳米电子元件的小型化需要新的方法来检查纳米尺度的埋入内部结构。我们使用原子力声显微镜技术(AFAM)来对亚表面缺陷进行成像。该技术结合了高横向分辨率和确定表面附近材料局部弹性特性的能力。由于埋在表面附近的结构改变了有效针尖-样品接触刚度,因此可以检测到它们。为了验证 AFAM 的检测能力,我们制造了具有不同几何形状和尺寸的明确定义的埋入空洞结构。氮化硅的大、薄、板状结构,局部填充是我们的第一批测试样品。然后,在一个减薄的硅片上刻蚀了 9 个小的、正方形、厚度逐渐增加的薄板,厚度从 30 纳米到 270 纳米不等。最后两个样品包含宽度在 1.6 到 10 微米之间变化的楔形结构。我们的结果表明,有可能检测到埋入深度在 180 到 900 纳米之间的空洞结构。我们还观察到,使用 AFAM 方法可以检测到的埋入缺陷的深度取决于缺陷的尺寸和几何形状,以及样品和缺陷的弹性性质不匹配的程度。通过有限元方法(FEM)模拟进行的定量分析验证了对小、薄板组的实验结果。

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