Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Aachen, Germany.
Nanotechnology. 2011 Sep 30;22(39):395203. doi: 10.1088/0957-4484/22/39/395203. Epub 2011 Sep 5.
Complementary resistive switches (CRS) were recently suggested to solve the sneak path problem of larger passive memory arrays. CRS cells consist of an antiserial setup of two bipolar resistive switching cells. The conventional destructive readout for CRS cells is based on a current measurement which makes a considerable call on the switching endurance. Here, we report a new approach for a nondestructive readout (NDRO) based on a capacity measurement. We suggest a concept of an alternative setup of a CRS cell in which both resistive switching cells have similar switching properties but are distinguishable by different capacities. The new approach has the potential of an energy saving and fast readout procedure without decreasing cycling performance and is not limited by the switching kinetics for integrated passive memory arrays.
互补式电阻开关（CRS）最近被提出用于解决较大的无源存储阵列中的旁路问题。CRS 单元由两个双极电阻开关单元的反串联组成。CRS 单元的传统破坏性读取基于电流测量，这对开关耐久性有很大的要求。在这里，我们报告了一种基于电容测量的非破坏性读取（NDRO）的新方法。我们提出了一种替代的 CRS 单元结构的概念，其中两个电阻开关单元具有相似的开关特性，但可以通过不同的电容来区分。新方法具有节能和快速读取过程的潜力，而不会降低循环性能，并且不受集成无源存储阵列的开关动力学的限制。
