Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Germany.
Nanotechnology. 2012 Aug 3;23(30):305205. doi: 10.1088/0957-4484/23/30/305205.
The realization of logic operations within passive crossbar memory arrays is a promising approach to expand the fields of application of such architectures. Material implication was recently suggested as the basic function of memristive crossbar junctions, and single bipolar resistive switches (BRS) as well as complementary resistive switches (CRS) were shown to be capable of realizing this logical functionality. Based on a systematic analysis of the Boolean functions, we demonstrate here that 14 of 16 Boolean functions can be realized with a single BRS or CRS cell in at most three sequential cycles. Since the read-out step is independent of the logic operation steps, the result of the logic operation is directly stored to memory, making logic-in-memory applications feasible.
在无源交叉记忆阵列中实现逻辑运算，是拓展此类架构应用领域的一种很有前途的方法。最近有人提出，用材料蕴涵来作为忆阻交叉结的基本功能，并且单双极电阻开关（BRS）以及互补电阻开关（CRS）都能够实现这种逻辑功能。基于对布尔函数的系统分析，我们在这里证明，在最多三个连续周期内，用单个 BRS 或 CRS 单元可以实现 16 个布尔函数中的 14 个。由于读出步骤与逻辑操作步骤是相互独立的，因此逻辑操作的结果可以直接存储到内存中，从而实现了内存中的逻辑应用。
