CSIC, Inst Quim Fis Rocasolano, C Serrano 119, Madrid, E-28006, Spain.
Phys Chem Chem Phys. 2011 Oct 21;13(39):17791-801. doi: 10.1039/c1cp21926j. Epub 2011 Sep 5.
The dissociation dynamics of Sn(CH(3))(4)(+), Sn(CH(3))(3)Cl(+), and Sn(CH(3))(3)Br(+) were investigated by threshold photoelectron photoion spectrometry using an electron imaging apparatus (iPEPICO) at the Swiss Light Source. The tetramethyltin ion was found to dissociate via Sn(CH(3))(4)(+) → Sn(CH(3))(3)(+) + CH(3) → Sn(CH(3))(2)(+) + 2CH(3), while the trimethyltin halide ions dissociated via methyl loss at low energies, and a competitive halogen loss at somewhat higher energies. The 0 K methyl loss onset for the three ions was found to be 9.410 ± 0.020 eV, 10.058 ± 0.020 eV, and 9.961 ± 0.020 eV, respectively. Statistical theory could not reproduce the observed onsets for the halogen loss steps in the halotrimethyltin ions. The halide loss signal as a function energy mimicked the excited state threshold photoelectron spectrum, from which we conclude that the halide loss from these ions takes place on an isolated excited state potential energy surface, which we describe by time dependent density functional calculations. The sequential loss of a second methyl group in the Sn(CH(3))(4)(+) ion, observed at about 3 eV higher energies than the first one, is also partially non-statistical. The derived product energy distribution resulting from the loss of the first methyl group is two-component with about 50% being statistical and the remainder associated with high translational energy products that peak at 2 eV. Time dependent DFT calculations show that a dissociative ͠B state lies in the vicinity of the experimental measurements. We thus propose that 50% of the Sn(CH(3))(4)(+) ions produced in this energy range internally convert to the ͠X state, on which they dissociate statistically, while the remainder dissociate directly from the repulsive ͠B state leading to high kinetic energy products.
采用电子成像装置(iPEPICO)在瑞士光源处进行阈光电离光电子能谱法,研究了 Sn(CH(3))(4)(+)、Sn(CH(3))(3)Cl(+) 和 Sn(CH(3))(3)Br(+)的离解动力学。发现四甲基锡离子通过 Sn(CH(3))(4)(+) → Sn(CH(3))(3)(+) + CH(3) → Sn(CH(3))(2)(+) + 2CH(3) 离解,而三甲基卤化锡离子在低能量下通过甲基损失,在稍高能量下通过竞争卤化物损失。发现三种离子的 0 K 甲基损失起始点分别为 9.410 ± 0.020 eV、10.058 ± 0.020 eV 和 9.961 ± 0.020 eV。统计理论无法重现卤化物损失步骤中观察到的起始点。卤化物损失信号随能量的变化类似于激发态阈光电离光谱,由此我们得出结论,这些离子中的卤化物损失发生在孤立的激发态势能表面上,我们通过时间相关密度泛函计算来描述该表面。在比第一个甲基损失高约 3 eV 的能量处,观察到 Sn(CH(3))(4)(+) 离子中第二个甲基的顺序损失,这也是部分非统计的。第一个甲基损失产生的产物能量分布为两分量,约 50%为统计分布,其余部分与高平移能产物相关,其峰值在 2 eV。时间相关的 DFT 计算表明,一个离解的 ͠B 态位于实验测量附近。因此,我们提出在这个能量范围内产生的 50%的 Sn(CH(3))(4)(+) 离子内部转化为 ͠X 态,它们在该态上进行统计离解,而其余部分则直接从排斥的 ͠B 态离解,导致高动能产物。