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块状合成晶态和晶核/非晶壳层硅纳米线及其在储能方面的应用。

Bulk synthesis of crystalline and crystalline core/amorphous shell silicon nanowires and their application for energy storage.

机构信息

Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, United States.

出版信息

ACS Nano. 2011 Oct 25;5(10):8383-90. doi: 10.1021/nn203166w. Epub 2011 Oct 10.

DOI:10.1021/nn203166w
PMID:21942645
Abstract

Silicon nanowires (NWs) have stimulated significant interest and found numerous applications; however, many applications will require a bulk quantity of nanowires to be synthesized in a reliable way. In this paper, we report the bulk synthesis of silicon nanowires on millimeter scale Al(2)O(3) spheres with a thermal chemical vapor deposition system (CVD) via the vapor-liquid-solid (VLS) growth mechanism. The spherical substrates enable the realization of Si nanowire synthesis on three-dimensional surfaces in comparison with the synthesis on a planar, two-dimensional wafer substrate. By modifying temperature in the recipe of synthesis, both single-crystalline and crystalline core/amorphous shell Si nanowires were obtained with this nanowire-on-spherical-support method. Conspicuous distinction in crystallinity of the nanowires was revealed by transmission electron microscopy characterization. The crystalline core/amorphous shell Si nanowires were utilized to form the anode of Li-ion battery half-cells with the traditional slurry method. Galvanostatic measurement demonstrated that the maximum power capacity achievable by the electrodes was 3500 mAh/g and capacity sustained at 1100 mAh/g after 60 cycles of charging and discharging.

摘要

硅纳米线(NWs)引起了极大的兴趣,并找到了许多应用;然而,许多应用将需要大量的纳米线以可靠的方式合成。在本文中,我们通过热化学气相沉积系统(CVD)在毫米级 Al2O3 球体上报告了硅纳米线的批量合成,采用的是汽-液-固(VLS)生长机制。与在平面二维晶片衬底上的合成相比,球形衬底能够实现三维表面上的 Si 纳米线合成。通过在合成配方中改变温度,使用这种纳米线在球形衬底上的方法获得了单晶和多晶核/非晶壳 Si 纳米线。通过透射电子显微镜表征揭示了纳米线结晶度的明显区别。使用晶态核/非晶壳硅纳米线通过传统的浆料法形成锂离子电池半电池的阳极。恒流测量表明,电极可实现的最大功率容量为 3500 mAh/g,在充电和放电 60 次后可持续保持 1100 mAh/g 的容量。

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