Institute for Solid State Electronics, Vienna University of Technology, Vienna, Austria.
Nanotechnology. 2011 Sep 30;22(39):395601. doi: 10.1088/0957-4484/22/39/395601. Epub 2011 Sep 2.
The feasibility of gallium as a catalyst for vapour-liquid-solid (VLS) nanowire (NW) growth deriving from an implantation process in silicon by a focused ion beam (FIB) is investigated. Si(100) substrates are subjected to FIB implantation of gallium ions with various ion fluence rates. NW growth is performed in a hot wall chemical vapour deposition (CVD) reactor at temperatures between 400 and 500 °C with 2% SiH(4)/He as precursor gas. This process results in ultra-fast growth of (112)- and (110)-oriented Si-NWs with a length of several tens of micrometres. Further investigation by transmission electron microscopy indicates the presence of a NW core-shell structure: while the NW core yields crystalline structuring, the shell consists entirely of amorphous material.
采用聚焦离子束（FIB）在硅中进行离子注入的方法，研究了镓作为气相-液相-固相（VLS）纳米线（NW）生长催化剂的可行性。对 Si（100）衬底进行了不同离子注入速率的镓离子注入。在温度为 400 至 500°C 之间、以 2% SiH(4)/He 为前驱体气体的热壁化学气相沉积（CVD）反应器中进行 NW 生长。该工艺导致（112）和（110）取向的 Si-NWs 以数十微米的长度超快生长。通过透射电子显微镜进一步研究表明，存在 NW 核壳结构：虽然 NW 核呈现出结晶结构，但壳完全由非晶材料组成。
