Department of Chemistry, Imperial College London, London, SW7 2AZ, UK.
Small. 2011 Oct 4;7(19):2736-41. doi: 10.1002/smll.201101015. Epub 2011 Aug 24.
Electron beam-induced shrinkage provides a convenient way of resizing solid-state nanopores in Si(3) N(4) membranes. Here, a scanning electron microscope (SEM) has been used to resize a range of different focussed ion beam-milled nanopores in Al-coated Si(3) N(4) membranes. Energy-dispersive X-ray spectra and SEM images acquired during resizing highlight that a time-variant carbon deposition process is the dominant mechanism of pore shrinkage, although granular structures on the membrane surface in the vicinity of the pores suggest that competing processes may occur. Shrinkage is observed on the Al side of the pore as well as on the Si(3) N(4) side, while the shrinkage rate is observed to be dependent on a variety of factors.
电子束诱导收缩为在 Si(3)N(4) 膜中重新调整固态纳米孔的尺寸提供了一种便捷的方法。在这里,扫描电子显微镜 (SEM) 已被用于调整一系列不同的聚焦离子束铣削的 Al 涂层 Si(3)N(4) 膜中的纳米孔的尺寸。在调整过程中获得的能谱和 SEM 图像突出表明,时变的碳沉积过程是孔收缩的主要机制,尽管孔附近的膜表面上的颗粒结构表明可能发生竞争过程。在孔的 Al 侧以及 Si(3)N(4)侧都观察到收缩,而收缩率被观察到取决于多种因素。