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溅射沉积薄膜外延 Ho 中自旋劈裂相的应变依赖性选择。

Strain dependent selection of spin-slip phases in sputter deposited thin-film epitaxial holmium.

机构信息

Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK.

出版信息

J Phys Condens Matter. 2011 Oct 19;23(41):416006. doi: 10.1088/0953-8984/23/41/416006.

Abstract

We report the structural and magnetic characterization of sputter deposited epitaxial Ho. We present room temperature characterization by atomic force microscopy and x-ray diffraction and temperature dependent characterization by x-ray diffraction and neutron diffraction. The data show the onset and change of the magnetic state as a function of temperature. Films of different thickness, exhibiting signs of differing epitaxially induced strain, tend towards specific spin-slip phases in the low temperature regime. The more highly strained thinnest films tend towards values with a longer magnetic wavelength.

摘要

我们报告了溅射沉积外延 Ho 的结构和磁性特征。我们通过原子力显微镜和 X 射线衍射进行了室温特性研究,并通过 X 射线衍射和中子衍射进行了温度相关特性研究。数据显示了磁状态随温度的开始和变化。不同厚度的薄膜,表现出不同外延应变诱导的迹象,在低温区倾向于特定的自旋滑移相。应变较大的较薄薄膜倾向于具有较长磁波长的数值。

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