Fahrtdinov R R, Feklisova O V, Grigoriev M V, Irzhak D V, Roshchupkin D V, Yakimov E B
Institution of Russian Academy of Sciences, Institute of Microelectronics Technology, and High-Purity Materials RAS, Chernogolovka 142432 Russia.
Rev Sci Instrum. 2011 Sep;82(9):093702. doi: 10.1063/1.3633948.
The x-ray beam induced current method (XBIC) is realized on the laboratory x-ray source using the polycapillary x-ray optics. It is shown that rather good images of grain boundaries in Si can be obtained by this method. The parameters of x-ray beam are estimated by the simulation of Schottky diode image. A good correlation between the experimental and calculated grain boundary XBIC contrast is obtained. The possibilities of laboratory source based XBIC method are estimated.
利用多毛细管X射线光学元件,在实验室X射线源上实现了X射线束感应电流法(XBIC)。结果表明,用这种方法可以获得相当好的硅中晶界图像。通过肖特基二极管图像模拟估算了X射线束的参数。实验得到的晶界XBIC对比度与计算值之间具有良好的相关性。评估了基于实验室源的XBIC方法的可能性。