Hilico Laurent, Douillet Albane, Karr Jean-Philippe, Tournié Eric
Département de Physique, Université d'Evry Val d'Essonne, Bd. F. Mitterrand, 91025 Evry, France.
Rev Sci Instrum. 2011 Sep;82(9):096106. doi: 10.1063/1.3640004.
We have fabricated and characterized an n-doped InSb Faraday isolator in the mid-IR range (9.2 μm). A high isolation ratio (31(2) dB) and low insertion loss (1.9(3) dB) are obtained. Temperature dependance is analyzed. Further possible improvements are discussed, including the realization of a two-stage isolator. A similar design can be used to cover a wide wavelength range (λ ~ 7.5-30 μm).