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少层石墨烯 Y 结中的热传导和整流。

Thermal conduction and rectification in few-layer graphene Y junctions.

机构信息

Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, People's Republic of China.

出版信息

Nanoscale. 2011 Nov;3(11):4604-7. doi: 10.1039/c1nr10945f. Epub 2011 Oct 11.

DOI:10.1039/c1nr10945f
PMID:21987096
Abstract

By using molecular dynamics simulations, we have studied heat flux in graphene Y junctions with lengths of 16.7 nm. It is found that the heat flux runs preferentially from the branches to the stem, which demonstrates an obvious thermal rectification effect in these asymmetric graphene ribbons. More interesting, compared to single-layer graphene Y junctions, a larger rectification ratio can be achieved in double-layer structures, due to the presence of layer-layer interactions. Combined with the availability of high quality few-layer graphene materials, our results shed light on heat conduction in graphene nanoribbons and may open up few-layer graphene applications in thermal management of nano electronics.

摘要

我们通过分子动力学模拟研究了长度为 16.7nm 的石墨烯 Y 结中的热流。研究发现,热流优先从分支流向主干,这表明在这些不对称的石墨烯带中存在明显的热整流效应。更有趣的是,与单层石墨烯 Y 结相比,由于存在层间相互作用,双层结构可以实现更大的整流比。结合高质量少层石墨烯材料的可用性,我们的结果为石墨烯纳米带中的热导提供了新的认识,并可能为纳米电子学的热管理开辟少层石墨烯的应用。

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Thermal conduction and rectification in few-layer graphene Y junctions.少层石墨烯 Y 结中的热传导和整流。
Nanoscale. 2011 Nov;3(11):4604-7. doi: 10.1039/c1nr10945f. Epub 2011 Oct 11.
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