聚合物改性溶胶-凝胶法制备的 Na0.5Bi0.5TiO3 铁电厚膜的结构与电学性能。
Structure and electrical properties of Na0.5Bi0.5TiO3 ferroelectric thick films derived from a polymer modified sol-gel method.
机构信息
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an, China.
出版信息
IEEE Trans Ultrason Ferroelectr Freq Control. 2011 Oct;58(10):2042-9. doi: 10.1109/TUFFC.2011.2054.
Lead-free NaBi(0.5)TiO(3) (NBT) ferroelectric thick films were prepared by a poly(vinylpyrrolidone) (PVP) modified sol-gel method. The NBT thick films annealed from 500°C to 750°C exhibit a perovskite structure. The relationship between annealing temperature, thickness, and electrical properties of the thick films has been investigated. The dielectric constants and remnant polarizations of the thick films increase with annealing temperature. The electrical properties of the NBT films show strong thickness dependence. As thickness increases from 1.0 to 4.8 μm, the dielectric constant of the NBT films increases from 620 to 848, whereas the dielectric loss is nearly independent of the thickness. The remnant polarization of the NBT thick films also increases with increasing thickness. The leakage current density first decreases and then increases with film thickness.
无铅 NaBi(0.5)TiO(3) (NBT) 铁电厚膜通过聚(乙烯基吡咯烷酮) (PVP) 改性的溶胶-凝胶法制备。在 500°C 到 750°C 之间退火的 NBT 厚膜呈现出钙钛矿结构。已经研究了厚膜的退火温度、厚度和电性能之间的关系。厚膜的介电常数和剩余极化随退火温度的升高而增加。NBT 薄膜的电性能具有很强的厚度依赖性。随着厚度从 1.0 增加到 4.8 μm，NBT 薄膜的介电常数从 620 增加到 848，而介电损耗几乎与厚度无关。NBT 厚膜的剩余极化也随厚度的增加而增加。漏电流密度随薄膜厚度先减小后增大。
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