McIntosh Dion, Zhou Qiugui, Chen Yaojia, Campbell Joe C
Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, Virginia 22904, USA.
Opt Express. 2011 Sep 26;19(20):19607-12. doi: 10.1364/OE.19.019607.
Gallium Phosphide (GaP) reach-through avalanche photodiodes (APDs) are reported. The APDs exhibited dark current less than a pico-ampere at unity gain. A quantum efficiency of 70% was achieved with a recessed window structure; this is almost two times higher than previous work.
据报道，有磷化镓（GaP）穿通雪崩光电二极管（APD）。这些APD在单位增益下表现出小于皮安的暗电流。采用凹陷窗口结构实现了70%的量子效率；这几乎比之前的工作高出两倍。
