Saraceno Clara J, Heckl Oliver H, Baer Cyrill R E, Golling Matthias, Südmeyer Thomas, Beil Kolja, Kränkel Christian, Petermann Klaus, Huber Günter, Keller Ursula
Department of Physics, Institute for Quantum Electronics, ETH Zürich, Wolfgang-Pauli-Strasse 16, 8093 Zürich, Switzerland.
Opt Express. 2011 Oct 10;19(21):20288-300. doi: 10.1364/OE.19.020288.
We report on power scaling of a modelocked thin disk laser based on the broadband mixed sesquioxide material Yb:LuScO₃. One of the key elements to achieve this result was an improved SESAM design with reduced two-photon-absorption (TPA) and high damage threshold. In a first experiment, using a standard antiresonant SESAM with no topcoating, we could demonstrate record short pulse durations of 195 fs at a moderate average power of 9.5 W. Furthermore, we were able to power scale our thin disk laser while keeping the pulses short reaching 23 W at a pulse duration of 235 fs. This was made possible by designing a new SESAM with multiple quantum wells (QW) and a suitable dielectric topcoating. We will present SESAM optimization guidelines for short pulse generation from high-power modelocked oscillators.
我们报道了基于宽带混合倍半氧化物材料Yb:LuScO₃的锁模薄片激光器的功率缩放。实现这一结果的关键要素之一是改进的SESAM设计，其具有降低的双光子吸收（TPA）和高损伤阈值。在第一个实验中，使用没有顶涂层的标准反谐振SESAM，我们能够在9.5 W的中等平均功率下演示创纪录的195 fs短脉冲持续时间。此外，我们能够在保持脉冲短的同时对薄片激光器进行功率缩放，在235 fs的脉冲持续时间下达到23 W。这是通过设计具有多个量子阱（QW）和合适介电顶涂层的新型SESAM实现的。我们将介绍用于从高功率锁模振荡器产生短脉冲的SESAM优化指南。
