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flip-chip 纳米线 p-Cu2O/n-ZnO 结中具有强光响应。

Strong photo-response in a flip-chip nanowire p-Cu2O/n-ZnO junction.

机构信息

Physical and Materials Chemistry Division, National Chemical Laboratory, Dr Homi Bhabha Road, Pune, India.

出版信息

Nanoscale. 2011 Nov;3(11):4706-12. doi: 10.1039/c1nr10665a. Epub 2011 Oct 14.

DOI:10.1039/c1nr10665a
PMID:22002162
Abstract

Cu(2)O nanoneedles are synthesized on a copper substrate by a simple anodization and reducing ambient annealing protocol. ZnO nanorods are grown on ITO coated glass by a low temperature chemical route. The electronic and photo-response properties of the p-Cu(2)O/n-ZnO flip-chip heterojunction are then studied and analyzed. We show that the I-V characteristic is rectifying and the junction exhibits a good photoresponse (∼120% under 1 V reverse bias) under AM 1.5 (1 Sun) illumination. This nano-heterojunction photo-response is far stronger as compared to that of a pulsed laser deposited thin film p-Cu(2)O/n-ZnO heterojunction, which can be attributed to higher junction area in the former case.

摘要

通过简单的阳极氧化和还原环境退火协议,在铜基底上合成了 Cu(2)O 纳米针。通过低温化学途径在 ITO 镀膜玻璃上生长了 ZnO 纳米棒。然后研究和分析了 p-Cu(2)O/n-ZnO 倒装芯片异质结的电子和光电响应特性。我们表明,I-V 特性是整流的,并且在 AM 1.5(1 太阳)照射下,结在 1V 反向偏压下表现出良好的光电响应(约 120%)。与脉冲激光沉积的 p-Cu(2)O/n-ZnO 异质结相比,这种纳米异质结的光电响应要强得多,这可以归因于前者中结面积更大。

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