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高产量合成 ZnO 纳米线阵列及其光电性能。

High-yield synthesis of ZnO nanowire arrays and their opto-electrical properties.

机构信息

Department of Materials Science and Engineering, National Chiao Tung University, No. 1001, University Rd, East Dist., Hsinchu City, 300, Taiwan.

出版信息

Nanoscale. 2012 Mar 7;4(5):1476-80. doi: 10.1039/c1nr10742a. Epub 2011 Oct 19.

Abstract

In this article, ZnO nanostructures were synthesized via the hydrothermal method which used ZnCl(2) and HMTA mixed solution as the precursor. A multistep growth was adopted to improve the growth restriction of a closed system, not only the length but also the aspect ratio were increased with steps of growth, and the shape of nanorods maintained integrity. Furthermore, photoluminescence spectra which have the near-band-edge-emission (∼3.37 eV) and defect-related emission show the optical properties of ZnO nanostructures. The defect-related emission intensity was greatly enhanced with the increasing surface area of ZnO nanowires. The level of the OH group was attributed to the yellow-light emission (∼580 nm) and the red-shift phenomenon. In addition, we fabricated two types of ultraviolet photodetectors: a single nanowire device and a nanowire-array device, operating at a low bias (less than 5 mV). With the lower energy consumption and the weaker persistent photoconductive effect, our ultraviolet photodetectors have better performance, exhibiting a short response time and higher sensitivity.

摘要

在本文中,通过水热法合成了 ZnO 纳米结构,该方法使用 ZnCl(2)和 HMTA 混合溶液作为前驱体。采用多步生长方法来提高封闭体系的生长限制,不仅增加了长度,而且还增加了生长步骤的纵横比,并且纳米棒的形状保持完整。此外,具有近带边发射(约 3.37 eV)和缺陷相关发射的光致发光光谱显示了 ZnO 纳米结构的光学性质。随着 ZnO 纳米线表面积的增加,缺陷相关发射强度大大增强。OH 基团的水平归因于黄光发射(约 580nm)和红移现象。此外,我们还制造了两种类型的紫外光探测器:单根纳米线器件和纳米线阵列器件,在低偏压(小于 5 mV)下工作。由于较低的能量消耗和较弱的持续光电导效应,我们的紫外光探测器具有更好的性能,表现出较短的响应时间和更高的灵敏度。

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