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在不同晶体取向生长的III族氮化物的极化场。

Polarization fields of III-nitrides grown in different crystal orientations.

作者信息

Feneberg M, Thonke K

机构信息

Institut für Halbleiterphysik, Universität Ulm, 89069 Ulm, Germany.

出版信息

J Phys Condens Matter. 2007 Oct 10;19(40):403201. doi: 10.1088/0953-8984/19/40/403201. Epub 2007 Sep 11.

Abstract

This article reviews the piezoelectric properties of III-nitrides with emphasis on GaN, InN, and their ternary alloys. After a short literature survey we concentrate on semipolar and nonpolar quantum wells grown on crystal planes other than the commonly used c plane ({0001}). The electrostatic field within a quantum well causes a quantum confined Stark effect and thus lowers the radiative transition probability as well as the transition energy. The basic impact of the quantum confined Stark effect on the optical properties of GaInN/GaN quantum wells is discussed in detail. Some routes to determine the magnitude of the electric field are described, and recent results are considered. The measured values are compared to published piezoelectric tensor elements.

摘要

本文综述了III族氮化物的压电特性,重点关注氮化镓(GaN)、氮化铟(InN)及其三元合金。在简短的文献综述之后,我们将重点关注在不同于常用c面({0001})的晶面上生长的半极性和非极性量子阱。量子阱内的静电场会引起量子限制斯塔克效应,从而降低辐射跃迁概率和跃迁能量。详细讨论了量子限制斯塔克效应对GaInN/GaN量子阱光学性质的基本影响。描述了一些确定电场强度的方法,并考虑了近期的研究结果。将测量值与已发表的压电张量元素进行了比较。

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