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一种在砷化镓衬底上对MgZnO纳米结构进行形态控制及其光学性质的简便方法。

A facile method for morphological control of MgZnO nanostructures on GaAs substrates and their optical properties.

作者信息

Lee Ju Ho, Kim Dong Chan, Hwang Sooyeon, Lee Jeong Yong, Cho Hyung Koun

机构信息

Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea.

出版信息

J Nanosci Nanotechnol. 2011 Aug;11(8):7327-30. doi: 10.1166/jnn.2011.4836.

DOI:10.1166/jnn.2011.4836
PMID:22103188
Abstract

This research reports on morphological changes depending on the growth temperature in MgZnO nanostructures grown on GaAs substrates by metalorganic chemical vapor deposition as well as the investigation of their optical properties. As the growth temperature increased, the morphology of the MgZnO nanostructure changed from one-dimensional nanowires (480 degrees C) to pseudo-two-dimensional nanowalls (500 degrees C) to pyramid-shaped structures (520 degrees C). Among these structures, the nanowalls exhibited the best optical properties due to the large active surface area and high crystalline quality.

摘要

本研究报告了通过金属有机化学气相沉积法在砷化镓衬底上生长的MgZnO纳米结构中,取决于生长温度的形态变化以及对其光学性质的研究。随着生长温度的升高,MgZnO纳米结构的形态从一维纳米线(480摄氏度)变为准二维纳米壁(500摄氏度),再变为金字塔形结构(520摄氏度)。在这些结构中,纳米壁由于具有大的活性表面积和高的晶体质量而表现出最佳的光学性质。

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