Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
Phys Rev Lett. 2011 Oct 21;107(17):176805. doi: 10.1103/PhysRevLett.107.176805. Epub 2011 Oct 17.
We report magnetotransport measurements in wide GaAs quantum wells with a tunable density to probe the stability of the fractional quantum Hall effect at a filling factor of ν=5/2 in the vicinity of the crossing between Landau levels (LLs) belonging to the different (symmetric and antisymmetric) electric subbands. When the Fermi energy (E(F)) lies in the excited-state LL of the symmetric subband, the 5/2 quantum Hall state is surprisingly stable and gets even stronger near this crossing, and then suddenly disappears and turns into a metallic state once E(F) moves to the ground-state LL of the antisymmetric subband. The sharpness of this disappearance suggests a first-order transition.
我们报告了在可调密度的宽 GaAs 量子阱中的磁输运测量结果,以研究在属于不同(对称和反对称)电子子带的 Landau 能级(LL)交叉附近,填充因子 ν=5/2 处分数量子霍尔效应的稳定性。当费米能量(E(F))位于对称子带的激发态 LL 中时,5/2 量子霍尔态令人惊讶地稳定,并且在接近这个交叉点时变得更强,然后突然消失并变成金属态,一旦 E(F)移动到反对称子带的基态 LL。这种消失的急剧性表明存在一级相变。