Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
Phys Rev Lett. 2009 Dec 18;103(25):256802. doi: 10.1103/PhysRevLett.103.256802. Epub 2009 Dec 17.
We report the observation of developing fractional quantum Hall states at Landau level filling factors nu = 1/2 and 1/4 in electron systems confined to wide GaAs quantum wells with significantly asymmetric charge distributions. The very large electric subband separation and the highly asymmetric charge distribution at which we observe these quantum Hall states, together with the fact that they disappear when the charge distribution is made symmetric, suggest that these are one-component states, possibly described by the Moore-Read Pfaffian wave function.
我们报告了在限制于具有显著非对称电荷分布的宽 GaAs 量子阱中的电子系统中观察到的分数量子 Hall 态，其朗道能级填充因子 ν = 1/2 和 1/4。我们观察到这些量子 Hall 态的非常大的电子子能带分离和高度非对称的电荷分布，以及当电荷分布变得对称时它们消失的事实，表明这些是单一组分态，可能由 Moore-Read Pfaffian 波函数描述。
