Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel.
Phys Rev Lett. 2011 Oct 28;107(18):186407. doi: 10.1103/PhysRevLett.107.186407. Epub 2011 Oct 27.
Experiments performed in the last years demonstrated slow relaxations and aging in the conductance of a large variety of materials. Here, we present experimental and theoretical results for conductance relaxation and aging for the case-study example of porous silicon. The relaxations are experimentally observed even at room temperature over time scales of hours, and when a strong electric field is applied for a time tw, the ensuing relaxation depends on tw. We derive a theoretical curve and show that all experimental data collapse onto it with a single time scale as a fitting parameter. This time scale is found to be of the order of thousands of seconds at room temperature. The generic theory suggested is not fine-tuned to porous silicon, and thus we believe the results should be universal, and the presented method should be applicable for many other systems manifesting memory and other glassy effects.
在过去的几年中进行的实验表明，在各种材料的电导中存在缓慢弛豫和老化现象。在这里，我们提出了多孔硅这一案例研究的电导弛豫和老化的实验和理论结果。即使在室温下，弛豫也可以在数小时的时间尺度上观察到，并且当施加强电场持续时间 tw 时，随后的弛豫取决于 tw。我们推导出一个理论曲线，并表明所有实验数据都可以用一个单一的时间尺度作为拟合参数来进行拟合。在室温下，这个时间尺度约为数千秒。所提出的通用理论并不是专门针对多孔硅的，因此我们相信这些结果应该是普遍的，并且所提出的方法应该适用于许多其他表现出记忆和其他玻璃态效应的系统。
