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一种研究锆钛酸铅铁电薄膜电容-电压特性及其在研究极化和矫顽场中的应用。

A study of capacitance-voltage characteristics of lead zirconate titanate ferroelectric thin films and their usage to investigate polarization and coercive field.

机构信息

College of Electronic Information and Control Engineering, Beijing University of Technology, 100 Pingle Yuan, Chaoyang District, Beijing 100124, People's Republic of China.

出版信息

J Phys Condens Matter. 2011 Dec 14;23(49):495901. doi: 10.1088/0953-8984/23/49/495901. Epub 2011 Nov 22.

Abstract

Capacitance-voltage (C-V) characteristics of lead zirconate titanate (PZT) thin films with a thickness of 130 nm were measured between 300 and 533 K. The transition between ferroelectric and paraelectric phases was revealed to be of second order in our case, with a Curie temperature at around 450 K. A linear relationship was found between the measured capacitance and the inverse square root of the applied voltage. It was shown that such a relationship could be fitted well by a universal expression of C/A = k(V+V(0))(-1/2) and that this expression could be derived by expanding the Landau-Devonshire free energy at an effective equilibrium position of the Ti/Zr ion in a PZT unit cell. By using the derived equations in this work, the free energy parameters for an individual material can be obtained solely from the corresponding C-V data, and the temperature dependences of both remnant polarization and coercive voltage are shown to be in quantitative agreement with the experimental data.

摘要

在 300 至 533 K 温度范围内,测量了厚度为 130nm 的锆钛酸铅(PZT)薄膜的电容-电压(C-V)特性。在我们的研究中,铁电相与顺电相之间的转变为二级相变,居里温度约为 450K。测量电容与外加电压的平方根呈线性关系。结果表明,这种关系可以很好地用 C/A = k(V+V(0))(-1/2)的通用表达式拟合,并且该表达式可以通过在 PZT 单元中 Ti/Zr 离子的有效平衡位置展开朗道-德弗尔斯自由能得到。通过使用本文中推导出的方程,可以仅从相应的 C-V 数据获得单个材料的自由能参数,并且剩余极化和矫顽电压的温度依赖性与实验数据定量一致。

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