College of Electronic Information and Control Engineering, Beijing University of Technology, 100 Pingle Yuan, Chaoyang District, Beijing 100124, People's Republic of China.
J Phys Condens Matter. 2011 Dec 14;23(49):495901. doi: 10.1088/0953-8984/23/49/495901. Epub 2011 Nov 22.
Capacitance-voltage (C-V) characteristics of lead zirconate titanate (PZT) thin films with a thickness of 130 nm were measured between 300 and 533 K. The transition between ferroelectric and paraelectric phases was revealed to be of second order in our case, with a Curie temperature at around 450 K. A linear relationship was found between the measured capacitance and the inverse square root of the applied voltage. It was shown that such a relationship could be fitted well by a universal expression of C/A = k(V+V(0))(-1/2) and that this expression could be derived by expanding the Landau-Devonshire free energy at an effective equilibrium position of the Ti/Zr ion in a PZT unit cell. By using the derived equations in this work, the free energy parameters for an individual material can be obtained solely from the corresponding C-V data, and the temperature dependences of both remnant polarization and coercive voltage are shown to be in quantitative agreement with the experimental data.
在 300 至 533 K 温度范围内,测量了厚度为 130nm 的锆钛酸铅(PZT)薄膜的电容-电压(C-V)特性。在我们的研究中,铁电相与顺电相之间的转变为二级相变,居里温度约为 450K。测量电容与外加电压的平方根呈线性关系。结果表明,这种关系可以很好地用 C/A = k(V+V(0))(-1/2)的通用表达式拟合,并且该表达式可以通过在 PZT 单元中 Ti/Zr 离子的有效平衡位置展开朗道-德弗尔斯自由能得到。通过使用本文中推导出的方程,可以仅从相应的 C-V 数据获得单个材料的自由能参数,并且剩余极化和矫顽电压的温度依赖性与实验数据定量一致。