Sriram Sharath, Bhaskaran Madhu, Perova Tatiana S, Melnikov Vasily A, Holland Anthony S
Microelectronics and Materials Technology Centre, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia.
IEEE Trans Ultrason Ferroelectr Freq Control. 2009 Feb;56(2):241-5. doi: 10.1109/TUFFC.2009.1032.
Thin films of ferroelectric strontium-doped lead zirconate titanate [PSZT, (Pb(0.92)Sr(0.08))(Zr(0.65)Ti(0.35))O(3)] deposited by RF magnetron sputtering have been analyzed by in situ analysis techniques. The in situ techniques employed for this study include micro-Raman spectroscopy and X-ray diffraction (XRD), and variations in thin film structure and orientations for temperatures up to 350 degrees C and 750 degrees C for the respective techniques have been studied. The samples analyzed were PSZT thin films deposited on platinum-coated silicon substrates at either room temperature or at 750 degrees C. In situ measurements using micro-Raman spectroscopy and XRD techniques have been used to identify the Curie point for poly-crystalline PSZT thin films and to determine the temperature-activating significant grain growth for room-temperature-deposited PSZT thin films. To study the presence of hysteresis, analysis was carried out during both temperature ramp-up and ramp-down cycles. Raman measurements showed expected bands (albeit weak), and the in situ measurements have detected variations in the crystal structure of the thin film samples, with negligible variations between the heating and cooling cycles. A combination of the Raman and XRD results has shown that the temperature-activating significant grain growth for the room-temperature-deposited films is about 275 degrees C and the Curie point lies between 325 and 400 degrees C. This relatively high Curie point makes these films suitable for wide temperature range applications.
通过射频磁控溅射沉积的铁电掺锶锆钛酸铅薄膜[PSZT，(Pb(0.92)Sr(0.08))(Zr(0.65)Ti(0.35))O(3)]已采用原位分析技术进行了分析。本研究采用的原位技术包括显微拉曼光谱和X射线衍射(XRD)，并且针对各自的技术研究了薄膜结构和取向在高达350摄氏度和750摄氏度的温度下的变化。所分析的样品是在室温或750摄氏度下沉积在涂有铂的硅衬底上的PSZT薄膜。利用显微拉曼光谱和XRD技术进行的原位测量已用于确定多晶PSZT薄膜的居里点，并确定室温沉积的PSZT薄膜中显著晶粒生长的温度激活情况。为了研究滞后现象的存在，在升温循环和降温循环期间都进行了分析。拉曼测量显示出预期的谱带(尽管很弱)，并且原位测量检测到薄膜样品晶体结构的变化，在加热和冷却循环之间的变化可忽略不计。拉曼和XRD结果的结合表明，室温沉积薄膜中显著晶粒生长的温度激活约为275摄氏度，居里点在325至400摄氏度之间。这个相对较高的居里点使得这些薄膜适用于宽温度范围的应用。
