Li Dengyue, Li Hongtao, Sun Hehui, Zhao Liancheng
Department of Information Materials Science and Technology, Harbin Institute of Technology, Harbin 150001, P, R, China.
Nanoscale Res Lett. 2011 Nov 23;6(1):601. doi: 10.1186/1556-276X-6-601.
Recently, solid-phase recrystallization of ultrathin indium antimonide nanocrystals (InSb NCs (films grown on SiO2/Si substrate is very attractive, because of the rapid development of thermal annealing technique. In this study, the recrystallization behavior of 35 nm indium antimonide film was studied. Through X-ray diffraction (XRD) analysis, it is demonstrated that the InSb film is composed of nanocrystals after high temperature rapid thermal annealing. Scanning electron microscopy shows that the film has a smooth surface and is composed of tightly packed spherical grains, the average grain size is about 12.3 nm according to XRD results. The optical bandgap of the InSb NCs film analyzed by Fourier Transform infrared spectroscopy measurement is around 0.26 eV. According to the current-voltage characteristics of the InSb NCs/SiO2/p-Si heterojunction, the film has the rectifying behavior and the turn-on voltage value is near 1 V.
最近，由于热退火技术的快速发展，在二氧化硅/硅衬底上生长的超薄锑化铟纳米晶体（InSb NCs）薄膜的固相重结晶非常引人注目。在本研究中，对35nm锑化铟薄膜的重结晶行为进行了研究。通过X射线衍射（XRD）分析表明，高温快速热退火后InSb薄膜由纳米晶体组成。扫描电子显微镜显示该薄膜表面光滑，由紧密堆积的球形晶粒组成，根据XRD结果，平均晶粒尺寸约为12.3nm。通过傅里叶变换红外光谱测量分析的InSb NCs薄膜的光学带隙约为0.26eV。根据InSb NCs/二氧化硅/p型硅异质结的电流-电压特性，该薄膜具有整流行为，开启电压值接近1V。
