碘化铯卤化物晶体中低价铋的近红外超宽带发光光谱特性。

Near-infrared ultrabroadband luminescence spectra properties of subvalent bismuth in CsI halide crystals.

机构信息

Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China.

出版信息

Opt Lett. 2011 Dec 1;36(23):4551-3. doi: 10.1364/OL.36.004551.

DOI:10.1364/OL.36.004551

Abstract

We observed two ultrabroadband near-infrared (NIR) luminescence bands around 1.2 and 1.5 μm in as-grown bismuth-doped CsI halide crystals, without additional aftertreatment. Dependence of the NIR emission properties on the excitation wavelength and measurement temperature was studied. Two kinds of NIR active centers of subvalent bismuth and color centers were demonstrated to coexist in Bi:CsI crystal. The eye-safe 1.5 μm emission band with an FWHM of 140 nm and lifetime of 213 μs at room temperature makes Bi:CsI crystal promising in the applications of the ultrafast laser and ultrabroadband amplifier.

摘要

我们在未经后处理的掺铋碘化铯卤化物晶体中观察到两个超宽带近红外（NIR）发光带，分别位于 1.2 和 1.5 μm 左右。研究了 NIR 发射特性对激发波长和测量温度的依赖性。证明 Bi:CsI 晶体中同时存在亚价态铋的两种 NIR 活性中心和色心。室温下 1.5 μm 发射带的半峰全宽为 140nm，寿命为 213μs，具有眼部安全性，这使得 Bi:CsI 晶体在超快激光和超宽带放大器的应用中具有广阔的前景。