Institute of Physical Chemistry, University of Zurich, 8057 Zurich, Switzerland.
Langmuir. 2012 Jan 17;28(2):1646-56. doi: 10.1021/la204124p. Epub 2011 Dec 28.
Both associative and dissociative H(2)O adsorption on SnO(2)(110), TiO(2)(110), and Ti-enriched Sn(1-x)Ti(x)O(2)(110) surfaces have been investigated at low ((1)/(12) monolayer (ML)) and high coverage (1 ML) by density functional theory calculations using the Gaussian and plane waves formalism. The use of a large supercell allowed the simulation at low symmetry levels. On SnO(2)(110), dissociative adsorption was favored at all coverages and was accompanied by stable associative H(2)O configurations. Increasing the coverage from (1)/(12) to 1 ML stabilized the (associatively or dissociatively) adsorbed H(2)O on SnO(2)(110) because of the formation of intermolecular H bonds. In contrast, on TiO(2)(110), the adsorption of isolated H(2)O groups ((1)/(12) ML) was more stable than at high coverage, and the favored adsorption changed from dissociative to associative with increasing coverage. For dissociative H(2)O adsorption on Ti-enriched Sn(1-x)Ti(x)O(2)(110) surfaces with Ti atoms preferably located on 6-fold-coordinated surface sites, the analysis of the Wannier centers showed a polarization of electrons surrounding bridging O atoms that were bound simultaneously to 6-fold-coordinated Sn and Ti surface atoms. This polarization suggested the formation of an additional bond between the 6-fold-coordinated Ti(6c) and bridging O atoms that had to be broken upon H(2)O adsorption. As a result, the H(2)O adsorption energy initially decreased, with increasing surface Ti content reaching a minimum at 25% Ti for (1)/(12) ML. This behavior was even more accentuated at high H(2)O coverage (1 ML) with the adsorption energy decreasing rapidly from 145.2 to 101.6 kJ/mol with the surface Ti content increasing from 0 to 33%. A global minimum of binding energies at both low and high coverage was found between 25 and 33% surface Ti content, which may explain the minimal cross-sensitivity to humidity previously reported for Sn(1-x)Ti(x)O(2) gas sensors. Above 12.5% surface Ti content, the binding energy decreased with increasing coverage, suggesting that the partial desorption of H(2)O is facilitated at a high fractional coverage.
通过使用高斯和平面波形式的密度泛函理论计算,研究了 SnO(2)(110)、TiO(2)(110)和 Ti 富 Sn(1-x)Ti(x)O(2)(110)表面上水的缔合和离解吸附在低((1)/(12)单层 (ML))和高覆盖度 (1 ML)下的情况。使用大超胞允许在低对称水平下进行模拟。在 SnO(2)(110)上,在所有覆盖度下都有利于离解吸附,并且伴随着稳定的缔合 H(2)O 构型。从((1)/(12)到 1 ML 的覆盖度增加稳定了 SnO(2)(110)上的(缔合或离解)吸附 H(2)O,因为形成了分子间 H 键。相比之下,在 TiO(2)(110)上,孤立的 H(2)O 基团((1)/(12) ML)的吸附比高覆盖度时更稳定,并且随着覆盖度的增加,优先的吸附从离解变为缔合。对于 Ti 富 Sn(1-x)Ti(x)O(2)(110)表面上离解吸附的 H(2)O,Ti 原子优选位于六配位表面位上,Wannier 中心的分析表明,同时与六配位 Sn 和 Ti 表面原子结合的桥接 O 原子周围的电子发生极化。这种极化表明在六配位 Ti(6c)和桥接 O 原子之间形成了一个额外的键,该键在 H(2)O 吸附时必须断裂。结果,H(2)O 吸附能最初降低,随着表面 Ti 含量的增加,在 25% Ti 时达到((1)/(12) ML)的最小值。这种行为在高 H(2)O 覆盖度(1 ML)下更为明显,随着表面 Ti 含量从 0 增加到 33%,吸附能从 145.2 迅速降低到 101.6 kJ/mol。在低覆盖度和高覆盖度下都发现了结合能的全局最小值,表面 Ti 含量在 25%到 33%之间,这可能解释了之前报道的 Sn(1-x)Ti(x)O(2)气体传感器对湿度的最小交叉灵敏度。表面 Ti 含量高于 12.5%时,随着覆盖度的增加,结合能降低,表明在高分数覆盖度下,H(2)O 的部分解吸更容易。