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采用 PECVD/PVD 工艺制备的嵌入 Ag 纳米粒子层,生成 SiOxCy-Ag 纳米复合材料薄膜。

Embedded layer of Ag nanoparticles prepared by a combined PECVD/PVD process producing SiOxCy-Ag nanocomposite thin films.

机构信息

CEA, LITEN, DTNM, LTS, 17, rue des martyrs 38054 Grenoble, France.

出版信息

Nanotechnology. 2012 Jan 13;23(1):015603. doi: 10.1088/0957-4484/23/1/015603. Epub 2011 Dec 8.

DOI:10.1088/0957-4484/23/1/015603
PMID:22156142
Abstract

Structural properties of SiO(x)C(y)-Ag nanocomposite thin films prepared by a dual process PVD-PECVD in the same reactor have been investigated. The experimental results have demonstrated the influence of a PECVD process carried out at room temperature for the growth of a dielectric matrix on the size and the distribution density of Ag nanoparticles (NPs) deposited beforehand by magnetron sputtering. The plasma during the growth of the encapsulation SiO(x)C(y) layer caused a diffusion of silver from NPs through the SiO(x)C(y) matrix associated with a decrease in the average size of nanoparticles and an increase of their distribution density. Silver diffusion is blocked at a barrier interface to form a buried layer of individual Ag NPs which, for instance, can find plasmonic applications. Silver also diffuses toward the outer surface inducing antibacterial properties. In both cases initial Ag NPs act as reservoirs for multifunctional properties of advanced nanostructured films.

摘要

通过在同一反应器中进行双工艺 PVD-PECVD 制备了 SiO(x)C(y)-Ag 纳米复合材料薄膜,并对其结构性能进行了研究。实验结果表明,在室温下进行的 PECVD 工艺对先前通过磁控溅射沉积的 Ag 纳米粒子(NPs)的尺寸和分布密度的影响。在封装 SiO(x)C(y) 层生长过程中的等离子体导致银从 NPs 通过 SiO(x)C(y) 基质扩散,从而导致纳米粒子的平均尺寸减小,分布密度增加。银的扩散在阻挡层界面处受阻,形成单个 Ag NPs 的埋层,例如,可用于等离子体应用。银也会向外部表面扩散,从而产生抗菌性能。在这两种情况下,初始 Ag NPs 都可以作为先进纳米结构薄膜多功能特性的储库。

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