n-ZnO/p-Si 三维异质结太阳能电池在硅空穴阵列中。

n-ZnO/p-Si 3D heterojunction solar cells in Si holey arrays.

机构信息

World Premier International (WPI) Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.

出版信息

Nanoscale. 2012 Feb 7;4(3):737-41. doi: 10.1039/c2nr11752e. Epub 2011 Dec 23.

DOI:10.1039/c2nr11752e

PMID:22197836

Abstract

A wafer-scale, low-cost solar cell based on n-ZnO/p-Si 3D heterojunction arrays on holey Si substrates has been fabricated. This device shows a power-conversion efficiency of 1.2% and high photosensitivity. The present n-ZnO/p-Si heterojunction architectures are envisaged as potentially valuable candidates for next-generation photovoltaics.

摘要

已制备出基于孔状硅衬底上的 n-ZnO/p-Si 3D 异质结阵列的晶圆级、低成本太阳能电池。该器件的功率转换效率为 1.2%，具有高光敏性。目前的 n-ZnO/p-Si 异质结结构被认为是下一代光伏技术的有前途的候选者。