Surface Chemistry Laboratory of Electronic Materials (SCHEMA), Department of Chemical Engineering, POSTECH, Pohang 790-784, Korea.
ACS Appl Mater Interfaces. 2012 Dec;4(12):6758-65. doi: 10.1021/am301957d. Epub 2012 Nov 28.
An air-stable, low-temperature, solution-based process for preparing CuInS(2) (CIS) superstrate solar cells using CdS-decorated ZnO nanorod (NR) arrays is reported. Efficient light harvesting and photoexcited charge transport were achieved by fabricating a ZnO NR window layer with a large p-n junction area via a hydrothermal reaction. A CdS buffer layer was deposited on a transparent ZnO NR substrate at room temperature via successive ion layer adsorption and reaction (SILAR) or nanocrystal layer deposition (NCLD). The prepared CdS/ZnO NR assembly was coated with a CIS absorber layer without the need for surface passivation organics or dispersion reagents. The CIS precursor solution, prepared using a metal salt, thiourea, and an amine solvent, yielded CIS nanocrystals (NCs) at temperatures up to 250 °C. The CIS/CdS/ZnO NR heterojunction structure exhibited an excellent photovoltaic performance compared to a planar ZnO film device due to enhanced light transmittance toward the absorber and a high charge collection efficiency. These results suggest that a superstrate CIS/CdS/ZnO NRs photovoltaic cell fabricated via the low-cost route described here has great potential as a next-generation solar cell device.
采用 CdS 修饰 ZnO 纳米棒(NR)阵列,报道了一种用于制备 CuInS2(CIS)顶电池的空气稳定、低温、溶液法工艺。通过水热反应制备 ZnO NR 窗口层,实现了高效的光捕获和光激发电荷输运,该窗口层具有较大的 p-n 结面积。在室温下通过连续离子层吸附和反应(SILAR)或纳米晶层沉积(NCLD)在透明 ZnO NR 衬底上沉积 CdS 缓冲层。无需表面钝化有机物或分散试剂即可在制备好的 CdS/ZnO NR 组件上涂覆 CIS 吸收层。采用金属盐、硫脲和胺溶剂制备的 CIS 前驱体溶液在高达 250°C 的温度下生成 CIS 纳米晶(NCs)。与平面 ZnO 薄膜器件相比,CIS/CdS/ZnO NR 异质结结构表现出优异的光伏性能,这是因为它对吸收体的光透过率增强和电荷收集效率提高。这些结果表明,通过此处所述的低成本方法制备的顶电池 CIS/CdS/ZnO NRs 光伏电池具有作为下一代太阳能电池器件的巨大潜力。