Jung Yong-Il, Noh Bum-Young, Lee Young-Seok, Baek Seong-Ho, Kim Jae Hyun, Park Il-Kyu
LED-IT Fusion Technology Research Center and Department of Electronic Engineering, Yeungnam University, Gyeongbuk, 712-749, Korea.
Nanoscale Res Lett. 2012 Jan 5;7(1):43. doi: 10.1186/1556-276X-7-43.
Visible light-emitting Ce-doped ZnO nanorods [NRs] without a post thermal annealing process were grown by hydrothermal method on a Si (100) substrate at a low temperature of 90°C. The structural investigations of Ce-doped ZnO NRs showed that the Ce3+ ions were successfully incorporated into the ZnO lattice sites without forming unwanted Ce-related compounds or precipitates. The optical investigation by photoluminescence spectra shows that the doped Ce3+ ions in the ZnO NRs act as an efficient luminescence center at 540 nm which corresponds to the optical transition of 5d → 4f orbitals in the Ce3+ ions. The photoluminescence intensity of the Ce-doped ZnO NRs increased with the increasing content of the Ce-doping agent because the energy transfer of the excited electrons in ZnO to the Ce3+ ions would be enhanced by increased Ce3+ ions.
通过水热法在90°C的低温下于Si(100)衬底上生长了无需后热退火处理的可见光发射铈掺杂氧化锌纳米棒[NRs]。铈掺杂氧化锌纳米棒的结构研究表明，Ce3+离子成功掺入氧化锌晶格位置，未形成不需要的铈相关化合物或沉淀物。通过光致发光光谱进行的光学研究表明，氧化锌纳米棒中掺杂的Ce3+离子在540nm处作为有效的发光中心，这对应于Ce3+离子中5d→4f轨道的光学跃迁。铈掺杂氧化锌纳米棒的光致发光强度随着铈掺杂剂含量的增加而增加，因为氧化锌中激发电子到Ce3+离子的能量转移会因Ce3+离子增加而增强。
