Park Geun Chul, Hwang Soo Min, Lee Seung Muk, Choi Jun Hyuk, Song Keun Man, Kim Hyun You, Kim Hyun-Suk, Eum Sung-Jin, Jung Seung-Boo, Lim Jun Hyung, Joo Jinho
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea.
Department of Nanomaterials Engineering, Chungnam National University, Daejeon 305-764, Korea.
Sci Rep. 2015 May 19;5:10410. doi: 10.1038/srep10410.
The incorporation of doping elements in ZnO nanostructures plays an important role in adjusting the optical and electrical properties in optoelectronic devices. In the present study, we fabricated 1-D ZnO nanorods (NRs) doped with different In contents (0% ~ 5%) on p-GaN films using a facile hydrothermal method, and investigated the effect of the In doping on the morphology and electronic structure of the NRs and the electrical and optical performances of the n-ZnO NRs/p-GaN heterojunction light emitting diodes (LEDs). As the In content increased, the size (diameter and length) of the NRs increased, and the electrical performance of the LEDs improved. From the electroluminescence (EL) spectra, it was found that the broad green-yellow-orange emission band significantly increased with increasing In content due to the increased defect states (oxygen vacancies) in the ZnO NRs, and consequently, the superposition of the emission bands centered at 415 nm and 570 nm led to the generation of white-light. These results suggest that In doping is an effective way to tailor the morphology and the optical, electronic, and electrical properties of ZnO NRs, as well as the EL emission property of heterojunction LEDs.
在ZnO纳米结构中掺入掺杂元素在调整光电器件的光学和电学性能方面起着重要作用。在本研究中，我们采用简便的水热法在p-GaN薄膜上制备了不同In含量（0%~5%）的一维ZnO纳米棒（NRs），并研究了In掺杂对NRs的形貌和电子结构以及n-ZnO NRs/p-GaN异质结发光二极管（LEDs）的电学和光学性能的影响。随着In含量的增加，NRs的尺寸（直径和长度）增大，LEDs的电学性能得到改善。从电致发光（EL）光谱中发现，由于ZnO NRs中缺陷态（氧空位）的增加，随着In含量的增加，宽的绿-黄-橙发射带显著增强，因此，以415nm和570nm为中心的发射带叠加导致了白光的产生。这些结果表明，In掺杂是一种调整ZnO NRs的形貌、光学、电子和电学性能以及异质结LEDs的EL发射特性的有效方法。
