Department of Mechanical and Industrial Engineering, University of Toronto, Toronto, ON, Canada.
Nanotechnology. 2012 Feb 17;23(6):065304. doi: 10.1088/0957-4484/23/6/065304. Epub 2012 Jan 17.
Nanowire field-effect transistors (nano-FETs) are nanodevices capable of highly sensitive, label-free sensing of molecules. However, significant variations in sensitivity across devices can result from poor control over device parameters, such as nanowire diameter and the number of electrode-bridging nanowires. This paper presents a fabrication approach that uses wafer-scale nanowire contact printing for throughput and uses automated nanomanipulation for precision control of nanowire number and diameter. The process requires only one photolithography mask. Using nanowire contact printing and post-processing (i.e. nanomanipulation inside a scanning electron microscope), we are able to produce devices all with a single-nanowire and similar diameters at a speed of ~1 min/device with a success rate of 95% (n = 500). This technology represents a seamless integration of wafer-scale microfabrication and automated nanorobotic manipulation for producing nano-FET sensors with consistent response across devices.
纳米线场效应晶体管（nano-FET）是一种能够对分子进行高灵敏度、无标记感应的纳米器件。然而，由于对器件参数（如纳米线直径和电极桥接纳米线的数量）的控制不佳，器件之间的灵敏度会存在显著差异。本文提出了一种制造方法，该方法使用晶圆级纳米线接触印刷来提高产量，并使用自动化纳米操作来精确控制纳米线的数量和直径。该工艺仅需要一个光刻掩模。我们使用纳米线接触印刷和后处理（即在扫描电子显微镜内进行纳米操作），能够以约 1 分钟/器件的速度 (~1 min/device) 生产出具有单个纳米线和相似直径的器件，成功率为 95%（n = 500）。这项技术代表了晶圆级微制造和自动化纳米机器人操作的无缝集成，可用于生产具有一致响应的 nano-FET 传感器。
