在高磁场下 FeO 涂层 MgB(2) 薄膜中临界电流密度的增强。
Enhancement of the critical current density in FeO-coated MgB(2) thin films at high magnetic fields.
机构信息
Institute of Electronic Engineering and Nanotechnologies "D.Ghitu" ASM, MD2028, Chisinau, Moldova.
出版信息
Beilstein J Nanotechnol. 2011;2:809-13. doi: 10.3762/bjnano.2.89. Epub 2011 Dec 14.
The effect of depositing FeO nanoparticles with a diameter of 10 nm onto the surface of MgB(2) thin films on the critical current density was studied in comparison with the case of uncoated MgB(2) thin films. We calculated the superconducting critical current densities (J(c)) from the magnetization hysteresis (M-H) curves for both sets of samples and found that the J(c) value of FeO-coated films is higher at all fields and temperatures than the J(c) value for uncoated films, and that it decreases to ~10(5) A/cm(2) at B = 1 T and T = 20 K and remains approximately constant at higher fields up to 7 T.
研究了在 MgB(2) 薄膜表面沉积直径为 10nm 的 FeO 纳米颗粒对临界电流密度的影响，并与未镀膜的 MgB(2) 薄膜进行了比较。我们从两组样品的磁化回线（M-H）计算出超导临界电流密度（J(c)），发现 FeO 镀膜样品在所有磁场和温度下的 J(c)值均高于未镀膜样品，且在 B = 1 T 和 T = 20 K 时降至约 10(5) A/cm(2)，在更高磁场下保持约恒定，直至 7 T。
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