Sb2S3 纳米线阵列的纳观铁电和压电性能。

Nanoscale ferroelectric and piezoelectric properties of Sb2S3 nanowire arrays.

机构信息

Materials Chemistry and Analysis Group, Department of Chemistry, University College Cork, Cork, Ireland.

出版信息

Nano Lett. 2012 Feb 8;12(2):868-72. doi: 10.1021/nl2039106. Epub 2012 Jan 27.

DOI:10.1021/nl2039106

Abstract

We report the first observation of piezoelectricity and ferroelectricity in individual Sb(2)S(3) nanowires embedded in anodic alumina templates. Switching spectroscopy-piezoresponse force microscopy (SS-PFM) measurements demonstrate that individual, c-axis-oriented Sb(2)S(3) nanowires exhibit ferroelectric as well as piezoelectric switching behavior. Sb(2)S(3) nanowires with nominal diameters of 200 and 100 nm showed d(33(eff)) values around 2 pm V(-1), while the piezo coefficient obtained for 50 nm diameter nanowires was relatively low at around 0.8 pm V(-1). A spontaneous polarization (P(s)) of approximately 1.8 μC cm(-2) was observed in the 200 and 100 nm Sb(2)S(3) nanowires, which is a 100% enhancement when compared to bulk Sb(2)S(3) and is probably due to the defect-free, single-crystalline nature of the nanowires synthesized. The 180° ferroelectric monodomains observed in Sb(2)S(3) nanowires were due to uniform polarization alignment along the polar c-axis.

摘要

我们首次观察到嵌入阳极氧化铝模板中的 Sb(2)S(3) 纳米线具有压电性和铁电性。开关光谱-压电力显微镜（SS-PFM）测量表明，各向异性、c 轴取向的 Sb(2)S(3) 纳米线表现出铁电和压电开关行为。直径为 200nm 和 100nm 的 Sb(2)S(3)纳米线的有效压电系数 d(33(eff))值约为 2pmV(-1)，而直径为 50nm 的纳米线的压系数相对较低，约为 0.8pmV(-1)。在 200nm 和 100nm 的 Sb(2)S(3)纳米线中观察到约 1.8μCcm(-2)的自发极化（P(s)），与块状 Sb(2)S(3)相比增加了 100%，这可能是由于纳米线合成的无缺陷、单晶性质所致。在 Sb(2)S(3)纳米线中观察到的 180°铁电单畴是由于沿极轴的均匀极化排列所致。