Institute of Experimental Physics, TU Bergakademie Freiberg, Freiberg, Germany.
J Microsc. 2012 Apr;246(1):70-6. doi: 10.1111/j.1365-2818.2011.03588.x. Epub 2012 Jan 23.
The determination of grain boundary planes in multicrystalline material has only been restricted to transmission electron microscope investigations (Jang et al., 1992; Elgat et al., 1985) or to metallograpical investigations of the grain boundary (Randle et al., 1993). The first method is expensive, and both are complex and time consuming in grain boundary preparation. This paper proposes the determination of grain boundary planes in semiconductor wafer by a combined application of Electron Back Scatter Diffraction and Infrared Transmission Microscopy. In particular, the new method is demonstrated with directional solidificated multicrystalline silicon.
多晶材料晶界面的测定仅局限于透射电子显微镜研究（Jang 等人，1992 年；Elgat 等人，1985 年）或晶界的金相研究（Randle 等人，1993 年）。第一种方法费用昂贵，两种方法在晶界准备方面都很复杂且耗时。本文提出了一种结合电子背散射衍射和红外透射显微镜来确定半导体晶片晶界面的方法。特别是，该新方法用定向凝固多晶硅进行了验证。
