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公众原位长期低剂量辐射暴露:特征描述与外推

In situ LTE exposure of the general public: Characterization and extrapolation.

作者信息

Joseph Wout, Verloock Leen, Goeminne Francis, Vermeeren Günter, Martens Luc

机构信息

Department of Information Technology, Ghent University, Interdisciplinary Institute for Broadband Technology (IBBT), Ghent, Belgium.

出版信息

Bioelectromagnetics. 2012 Sep;33(6):466-75. doi: 10.1002/bem.21707. Epub 2012 Jan 23.

Abstract

In situ radiofrequency (RF) exposure of the different RF sources is characterized in Reading, United Kingdom, and an extrapolation method to estimate worst-case long-term evolution (LTE) exposure is proposed. All electric field levels satisfy the International Commission on Non-Ionizing Radiation Protection (ICNIRP) reference levels with a maximal total electric field value of 4.5 V/m. The total values are dominated by frequency modulation (FM). Exposure levels for LTE of 0.2 V/m on average and 0.5 V/m maximally are obtained. Contributions of LTE to the total exposure are limited to 0.4% on average. Exposure ratios from 0.8% (LTE) to 12.5% (FM) are obtained. An extrapolation method is proposed and validated to assess the worst-case LTE exposure. For this method, the reference signal (RS) and secondary synchronization signal (S-SYNC) are measured and extrapolated to the worst-case value using an extrapolation factor. The influence of the traffic load and output power of the base station on in situ RS and S-SYNC signals are lower than 1 dB for all power and traffic load settings, showing that these signals can be used for the extrapolation method. The maximal extrapolated field value for LTE exposure equals 1.9 V/m, which is 32 times below the ICNIRP reference levels for electric fields.

摘要

在英国雷丁对不同射频源进行了原位射频(RF)暴露特性研究,并提出了一种外推方法来估计最坏情况下的长期演进(LTE)暴露。所有电场水平均满足国际非电离辐射防护委员会(ICNIRP)的参考水平,最大总电场值为4.5V/m。总值主要由调频(FM)决定。获得了LTE平均暴露水平为0.2V/m,最大为0.5V/m。LTE对总暴露的贡献平均限于0.4%。获得了从0.8%(LTE)到12.5%(FM)的暴露比率。提出并验证了一种外推方法来评估最坏情况下的LTE暴露。对于该方法,测量参考信号(RS)和二次同步信号(S-SYNC),并使用外推因子将其外推到最坏情况值。对于所有功率和业务负载设置,基站的业务负载和输出功率对原位RS和S-SYNC信号的影响低于1dB,表明这些信号可用于外推方法。LTE暴露的最大外推场值等于1.9V/m,比ICNIRP电场参考水平低32倍。

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