Ballesteros G C, Matres J, Martí J, Oton C J
Universidad Politecnica de Valencia, Camino de Vera, Valencia, Spain.
Opt Express. 2011 Dec 5;19(25):24980-5. doi: 10.1364/OE.19.024980.
We present an experimental technique to characterize backscattering in silicon microring resonators, together with a simple analytical model that reproduces the experimental results. The model can extract all the key parameters of an add-drop-type resonator, which are the loss, both coupling coefficients and backscattering. We show that the backscattering effect strongly affects the resonance shape, and that consecutive resonances of the same ring can have very different backscattering parameters.
我们提出了一种用于表征硅微环谐振器中背向散射的实验技术，以及一个能再现实验结果的简单分析模型。该模型可以提取出一个分插型谐振器的所有关键参数，即损耗、耦合系数和背向散射。我们表明，背向散射效应会强烈影响谐振形状，并且同一个环的连续谐振可能具有非常不同的背向散射参数。
