Yang Senlin, Wang Xuefeng, Guo Haitao, Dong Guoping, Peng Bo, Qiu Jianrong, Zhang Rong, Shi Yi
National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China.
Opt Express. 2011 Dec 19;19(27):26529-35. doi: 10.1364/OE.19.026529.
Structural and near-infrared (NIR) emission properties were investigated in the Tm(3+)-Dy(3+) codoped Ge-Ga-based amorphous chalcohalide films fabricated by pulsed laser deposition. The homogeneous films illustrated similar random network to the glass target according to the measurements of X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. An 808 nm laser diode pumping generated a superbroadband NIR emission ranging from 1050 to 1570 nm and the other intense broadband NIR emission centered at ~1800 nm, which was attributed to the efficient energy transfer from Tm(3+) to Dy(3+) ions. This was further verified by the broad-range excitation measurements near the Urbach optical-absorption edge involved defect states. The results shed light on the potential highly integrated planar optical device applications of the codoped amorphous chalcohalide films.
通过脉冲激光沉积制备了掺Tm(3+) - Dy(3+)的锗镓基非晶硫卤化物薄膜，并对其结构和近红外（NIR）发射特性进行了研究。根据X射线衍射、X射线光电子能谱和拉曼光谱的测量结果，均匀薄膜呈现出与玻璃靶相似的随机网络结构。808 nm激光二极管泵浦产生了范围为1050至1570 nm的超宽带近红外发射，以及另一个中心位于~1800 nm的强宽带近红外发射，这归因于从Tm(3+)到Dy(3+)离子的有效能量转移。通过涉及缺陷态的Urbach光吸收边缘附近的宽范围激发测量，进一步证实了这一点。这些结果为共掺杂非晶硫卤化物薄膜在潜在的高度集成平面光学器件应用方面提供了启示。
