Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.
Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, 315211, China.
Sci Rep. 2017 Jan 20;7:41168. doi: 10.1038/srep41168.
Gallium-based Ga-Sb-S sulfide glasses was elaborated and studied. A relationship between the structure, composition, and optical properties of the glass has been established. The effects of the introduction of Ga on the structure using infrared and Raman spectroscopies and on the Er-doped IR emission have been discussed. The results show that incorporation of Ga induced the dissociation of [SbS] pyramids units and the formation of tetrahedral [GaS] units. The dissolved rare earth ions are separated around the Ga-S bonding and the infrared emission quenching are controlled. Moreover, continuous introduction of Er ions into the glass forms more Er-S bonds through the further aggregation surrounding the [GaS] units. In return, the infrared emission intensity decreased with excessive Er ion addition. This phenomenon is correlated with the recurrence concentration quenching effect induced by the increase of [GaS] units.
研制并研究了基于镓的 Ga-Sb-S 硫化物玻璃。建立了玻璃的结构、组成和光学性质之间的关系。利用红外和拉曼光谱讨论了 Ga 的引入对结构以及对掺 Er 的 IR 发射的影响。结果表明,Ga 的掺入诱导了[SbS] 金字塔单元的解离和四面体[GaS]单元的形成。溶解的稀土离子分离在 Ga-S 键周围,控制着红外发射猝灭。此外,通过进一步围绕[GaS]单元聚集,连续引入 Er 离子形成更多的 Er-S 键。相反,随着过量 Er 离子的添加,红外发射强度降低。这种现象与由于[GaS]单元增加而引起的重复浓度猝灭效应有关。