Wu Tsu-Hsiu, Wu Jui-Pin, Chiu Yi-Jen
Institute of Electro-Optical Engineering and Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan.
Opt Express. 2011 Dec 19;19(27):26645-50. doi: 10.1364/OE.19.026645.
A new type of semiconductor quantum well (QW) for high-speed all optical wavelength converter (AOWC) is proposed and demonstrated in this work. Based on InGaAsP (well)/InGaAlAs (barrier) multiple QW, large electron band offset ratio relative to heavy hole can be attained to shorten sweep rate of photocarrier driven by electric field, realizing high-speed efficient AOWC through cross absorption modulation (XAM). By such QWs, an optical waveguide with high-speed electrode connection is fabricated. A -3dB bandwidth of 38 GHz with 8V bias in time-varying photocurrent and all optical response is observed. The corresponding sweep time is less than 10ps, consistent with calculated tunneling rate of QW and thus confirming high sweep rate through field-driven tunneling processing. All-optical conversion with error-free 40Gb/s data transmission and -11dB of conversion efficiency in system performance is also attained in this device, suggesting that such AOWC has potential for 100Gb/s application.
本文提出并演示了一种用于高速全光波长转换器（AOWC）的新型半导体量子阱（QW）。基于InGaAsP（阱）/InGaAlAs（势垒）多量子阱，相对于重空穴可获得较大的电子带偏移率，以缩短电场驱动光载流子的扫描速率，通过交叉吸收调制（XAM）实现高速高效的AOWC。利用这种量子阱制作了具有高速电极连接的光波导。在时变光电流和全光响应中，观察到在8V偏压下-3dB带宽为38GHz。相应的扫描时间小于10ps，与量子阱的计算隧穿速率一致，从而证实了通过场驱动隧穿过程实现的高扫描速率。该器件还实现了无差错40Gb/s数据传输的全光转换以及系统性能中-11dB的转换效率，表明这种AOWC具有用于100Gb/s应用的潜力。
