使用粗糙斜面ZnO纳米锥阵列提高基于GaN的发光二极管中的光提取效率

Enhancement of light extraction in GaN-based light-emitting diodes using rough beveled ZnO nanocone arrays.

作者信息

Yin Zhengmao, Liu Xiaoyan, Wu Yongzhong, Hao Xiaopeng, Xu Xiangang

机构信息

State Key Laboratory of Crystal Materials, Center of Bio & Micro/nano Functional Materials, Shandong University, Jinan, China.

出版信息

Opt Express. 2012 Jan 16;20(2):1013-21. doi: 10.1364/OE.20.001013.

DOI:10.1364/OE.20.001013

PMID:22274448

Abstract

A remarkable enhancement of light extraction efficiency in GaN-based blue light-emitting diodes (LEDs) with rough beveled ZnO nanocone arrays grown on the planar indium tin oxide (ITO) layer is reported. The light output power of LEDs with rough beveled ZnO nanocone arrays was increased by about 110% at 20 mA compared with conventional LEDs with planar ITO. The light extraction efficiency of GaN-based LEDs with rough-beveled ZnO nanocones is measured much greater than with smooth-surface hexagonal ZnO nanorods. The light-ray tracing analysis showed that ZnO nanocones with rough surfaces enlarge the light escape cone of GaN-based LEDs and have a greater advantage for extracting light compared with ZnO nanorods.

摘要

据报道，在平面铟锡氧化物（ITO）层上生长有粗糙斜面ZnO纳米锥阵列的氮化镓基蓝光发光二极管（LED）中，光提取效率有显著提高。与具有平面ITO的传统LED相比，具有粗糙斜面ZnO纳米锥阵列的LED在20 mA电流下的光输出功率提高了约110%。测量结果表明，具有粗糙斜面ZnO纳米锥的氮化镓基LED的光提取效率远高于具有光滑表面的六边形ZnO纳米棒。光线追踪分析表明，表面粗糙的ZnO纳米锥扩大了氮化镓基LED的光逸出锥，与ZnO纳米棒相比，在提取光方面具有更大优势。