Wei Tongbo, Kong Qingfeng, Wang Junxi, Li Jing, Zeng Yiping, Wang Guohong, Li Jinmin, Liao Yuanxun, Yi Futing
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
Opt Express. 2011 Jan 17;19(2):1065-71. doi: 10.1364/OE.19.001065.
InGaN-based light emitting diodes (LEDs) with a top nano-roughened p-GaN surface are fabricated using self-assembled CsCl nano-islands as etch masks. Following formation of hemispherical GaN nano-island arrays, electroluminescence (EL) spectra of roughened LEDs display an obvious redshift due to partial compression release in quantum wells through Inductively Coupled Plasma (ICP) etching. At a 350-mA current, the enhancement of light output power of LEDs subjected to ICP treatment with durations of 50, 150 and 250 sec compared with conventional LED have been determined to be 9.2, 70.6, and 42.3%, respectively. Additionally, the extraction enhancement factor can be further improved by increasing the size of CsCl nano-island. The economic and rapid method puts forward great potential for high performance lighting devices.
采用自组装的CsCl纳米岛作为蚀刻掩膜，制备了具有顶部纳米粗糙化p-GaN表面的基于InGaN的发光二极管（LED）。在形成半球形GaN纳米岛阵列之后，由于通过电感耦合等离子体（ICP）蚀刻使量子阱中的部分压缩释放，粗糙化LED的电致发光（EL）光谱显示出明显的红移。在350 mA电流下，与传统LED相比，经过50、150和250秒ICP处理的LED的光输出功率增强分别确定为9.2%、70.6%和42.3%。此外，通过增加CsCl纳米岛的尺寸，可以进一步提高提取增强因子。这种经济且快速的方法为高性能照明设备带来了巨大潜力。
