Jun Young Chul, Gonzales Edward, Reno John L, Shaner Eric A, Gabbay Alon, Brener Igal
Center for Integrated Nanotechnologies (CINT), Sandia National Laboratories, PAlbuquerque, New Mexico 87185, USA.
Opt Express. 2012 Jan 16;20(2):1903-11. doi: 10.1364/OE.20.001903.
We demonstrate electrically-controlled active tuning of mid-infrared metamaterial resonances using depletion-type devices. The depletion width in an n-doped GaAs epilayer changes with an electric bias, inducing a change of the permittivity of the substrate and leading to frequency tuning of the resonance. We first present our detailed theoretical analysis and then explain experimental data of bias-dependent metamaterial transmission spectra. This electrical tuning is generally applicable to a variety of infrared metamaterials and plasmonic structures, which can find novel applications in chip-scale active infrared devices.
我们展示了使用耗尽型器件对中红外超材料共振进行电控主动调谐。n型掺杂砷化镓外延层中的耗尽宽度会随电偏压而变化，从而引起衬底介电常数的变化，进而导致共振频率调谐。我们首先给出详细的理论分析，然后解释与偏压相关的超材料透射光谱的实验数据。这种电调谐通常适用于各种红外超材料和等离子体结构，有望在芯片级有源红外器件中找到新的应用。
