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不同前驱体温度下二氧化钛薄膜的生长行为。

Growth behavior of titanium dioxide thin films at different precursor temperatures.

作者信息

Nam Sang-Hun, Cho Sang-Jin, Boo Jin-Hyo

机构信息

Department of Chemistry and Institute of Basic Science, Sungkyunkwan University, Suwon, 440-746, South Korea.

出版信息

Nanoscale Res Lett. 2012 Jan 26;7(1):89. doi: 10.1186/1556-276X-7-89.

Abstract

The hydrophilic TiO2 films were successfully deposited on slide glass substrates using titanium tetraisopropoxide as a single precursor without carriers or bubbling gases by a metal-organic chemical vapor deposition method. The TiO2 films were employed by scanning electron microscopy, Fourier transform infrared spectrometry, UV-Visible [UV-Vis] spectroscopy, X-ray diffraction, contact angle measurement, and atomic force microscopy. The temperature of the substrate was 500°C, and the temperatures of the precursor were kept at 75°C (sample A) and 60°C (sample B) during the TiO2 film growth. The TiO2 films were characterized by contact angle measurement and UV-Vis spectroscopy. Sample B has a very low contact angle of almost zero due to a superhydrophilic TiO2 surface, and transmittance is 76.85% at the range of 400 to 700 nm, so this condition is very optimal for hydrophilic TiO2 film deposition. However, when the temperature of the precursor is lower than 50°C or higher than 75°C, TiO2 could not be deposited on the substrate and a cloudy TiO2 film was formed due to the increase of surface roughness, respectively.

摘要

通过金属有机化学气相沉积法,以四异丙醇钛作为单一前驱体,在无载体或鼓泡气体的情况下,成功地在载玻片基底上沉积了亲水性二氧化钛薄膜。利用扫描电子显微镜、傅里叶变换红外光谱、紫外可见光谱、X射线衍射、接触角测量和原子力显微镜对二氧化钛薄膜进行了研究。在二氧化钛薄膜生长过程中,基底温度为500°C,前驱体温度分别保持在75°C(样品A)和60°C(样品B)。通过接触角测量和紫外可见光谱对二氧化钛薄膜进行了表征。由于二氧化钛表面具有超亲水性,样品B的接触角非常低,几乎为零,在400至700nm范围内的透过率为76.85%,因此这种条件对于亲水性二氧化钛薄膜的沉积非常理想。然而,当前驱体温度低于50°C或高于75°C时,二氧化钛无法沉积在基底上,并且分别由于表面粗糙度的增加而形成了浑浊的二氧化钛薄膜。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a051/3296554/8db0004d80f7/1556-276X-7-89-1.jpg

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