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具有极性表面锚定的样品中弯曲形分子B2相的条纹和线状纹理。

Stripe and line textures in the B2 phase of bent-shape molecules in samples with polar surface anchoring.

作者信息

Lejček Lubor, Novotná Vladimíra, Glogarová Milada

机构信息

Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, CZ-182 21 Prague 8, Czech Republic.

出版信息

Phys Rev E Stat Nonlin Soft Matter Phys. 2011 Dec;84(6 Pt 1):061701. doi: 10.1103/PhysRevE.84.061701. Epub 2011 Dec 1.

DOI:10.1103/PhysRevE.84.061701
PMID:22304103
Abstract

In the B2 phase formed by bent-shaped molecules a dense line texture is frequently observed. For the texture description a model is proposed consisting of a periodic system of anticlinic antiferroelectric bulk domains with opposite chiralities separated by π walls in which polarization rotates. The bulk domains are situated between layers of synclinic ferroelectric phase near the upper and lower surfaces. In the surface layers induced by polar anchoring domains of opposite chirality are separated by defect lines. Under the electric field the ferroelectric layer near one sample surface is growing against the antiferroelectric structure in the sample bulk and the stripe texture is fading out, but still in the saturated field surface lines or walls persist separating ferroelectric domains of opposite chirality. The proposed model is adapted also for a case when the anticlinic antiferroelectric structure in the sample bulk is sandwiched between anticlinic ferroelectric layers near the surfaces. In that case the applied electric field eliminates all the lines because the resulting anticlinic ferroelectric structure is racemic, with no chiral domains.

摘要

在由弯曲分子形成的B2相中,经常观察到密集的线纹织构。为了描述这种织构,提出了一个模型,该模型由一个周期性的反斜反铁电体块畴系统组成,具有相反手性的块畴被极化旋转的π壁分隔开。块畴位于上下表面附近的顺斜铁电相层之间。在表面层中,由相反手性的极性锚定畴诱导的畴被缺陷线分隔开。在电场作用下,靠近一个样品表面的铁电层逆着样品块体中的反铁电结构生长,条纹织构逐渐消失,但在饱和场中,表面线或壁仍然存在,分隔着相反手性的铁电畴。所提出的模型也适用于样品块体中的反斜反铁电结构夹在表面附近的反斜铁电层之间的情况。在这种情况下,施加的电场消除了所有的线,因为产生的反斜铁电结构是外消旋的,没有手性畴。

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