离子束诱导 Zn2SiO4:Eu3+ 纳米荧光粉的非晶化和键断裂。
Ion beam induced amorphization and bond breaking in Zn2SiO4:Eu3+ nanocrystalline phosphor.
机构信息
Prof. CNR Rao Centre for Nano Research, Tumkur University, Tumkur, India.
出版信息
Spectrochim Acta A Mol Biomol Spectrosc. 2012 May;90:18-21. doi: 10.1016/j.saa.2011.12.066. Epub 2011 Dec 30.
This paper reports on the ionoluminescence (IL) of Zn(2)SiO(4):Eu(3+) nanophosphors bombarded with 100 MeV Si(7+) ions with fluences in the range (3.91-21.48)×10(12) ions cm(-2). The prominent IL emission peaks recorded at 580, 590, 612, 650 and 705 nm are attributed to the luminescence centers activated by Eu(3+) ions. It is observed that IL intensity decreases and saturates with increase of Si(7+) ion fluence. Fourier transform infrared (FT-IR) studies confirm surface/bulk amorphization for a fluence of (3.91-21.48)×10(13) ions cm(-2). These results show degradation of SiO (2ν(3)) bonds present on the surface of the sample and/or due to lattice disorder produced by dense electronic excitation under heavy ion irradiation. These results are discussed in detail.
本文报告了用 100 MeV 的 Si(7+)离子辐照，离子辐照剂量范围为（3.91-21.48）×10(12)离子/cm(2)时，Zn(2)SiO(4):Eu(3+)纳米荧光粉的离子发光（IL）。记录到的在 580、590、612、650 和 705nm 处的显著 IL 发射峰归因于 Eu(3+)离子激活的发光中心。观察到 IL 强度随 Si(7+)离子剂量的增加而减小并饱和。傅里叶变换红外（FT-IR）研究证实，在（3.91-21.48）×10(13)离子/cm(2)的剂量下发生表面/体相非晶化。这些结果表明，样品表面存在的 SiO(2ν(3))键的降解以及/或者由于重离子辐照下密集的电子激发产生的晶格无序。这些结果进行了详细讨论。
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