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通过分子自旋对金属进行可调掺杂。

Tunable doping of a metal with molecular spins.

机构信息

NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE, Enschede, The Netherlands.

出版信息

Nat Nanotechnol. 2012 Feb 5;7(4):232-6. doi: 10.1038/nnano.2012.1.

DOI:10.1038/nnano.2012.1
PMID:22306840
Abstract

The mutual interaction of localized magnetic moments and their interplay with itinerant conduction electrons in a solid are central to many phenomena in condensed-matter physics, including magnetic ordering and related many-body phenomena such as the Kondo effect, the Ruderman-Kittel-Kasuya-Yoshida interaction and carrier-induced ferromagnetism in diluted magnetic semiconductors. The strength and relative importance of these spin phenomena are determined by the magnitude and sign of the exchange interaction between the localized magnetic moments and also by the mean distance between them. Detailed studies of such systems require the ability to tune the mean distance between the localized magnetic moments, which is equivalent to being able to control the concentration of magnetic impurities in the host material. Here, we present a method for doping a gold film with localized magnetic moments that involves depositing a monolayer of a metal terpyridine complex onto the film. The metal ions in the complexes can be cobalt or zinc, and the concentration of magnetic impurities in the gold film can be controlled by varying the relative amounts of cobalt complexes (which carry a spin) and zinc complexes (which have zero spin). Kondo and weak localization measurements demonstrate that the magnetic impurity concentration can be systematically varied up to ∼800 ppm without any sign of inter-impurity interaction. Moreover, we find no evidence for the unwanted clustering that is often produced when using alternative methods.

摘要

在凝聚态物理中,许多现象都与固体中局部磁矩及其与巡游传导电子的相互作用有关,包括磁有序和相关的多体现象,如近藤效应、Ruderman-Kittel-Kasuya-Yoshida 相互作用以及稀磁半导体中的载流子诱导铁磁性。这些自旋现象的强度和相对重要性取决于局部磁矩之间的交换相互作用的大小和符号,以及它们之间的平均距离。对这些系统的详细研究需要能够调整局部磁矩之间的平均距离,这相当于能够控制主体材料中磁性杂质的浓度。在这里,我们提出了一种用局部磁矩掺杂金膜的方法,该方法涉及在金膜上沉积单层金属三吡啶络合物。络合物中的金属离子可以是钴或锌,通过改变钴络合物(带有自旋)和锌络合物(不带自旋)的相对量,可以控制金膜中的磁性杂质浓度。Kondo 和弱局域化测量表明,在没有任何杂质相互作用迹象的情况下,磁性杂质浓度可以系统地变化到约 800ppm。此外,我们没有发现当使用替代方法时经常产生的不需要的团聚的证据。

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